Polishing liquid composition

ABSTRACT

A polishing liquid composition is applicable as a means of forming embedded metal interconnections on a semiconductor substrate. In a surface to be polished comprising an insulating layer and a metal interconnection layer, the polishing liquid composition is capable of maintaining a polishing speed of the metal layer, of suppressing an etching speed, and of preventing dishing of the metal layer.

TECHNICAL FIELD

The present invention relates to a polishing liquid composition forpolishing a surface to be polished comprising an insulating layer and ametal layer. More specifically, the present invention relates to apolishing liquid composition which is applicable as a means of formingembedded metal interconnection on a semiconductor substrate, a processfor polishing, and a process for manufacturing a semiconductorsubstrate.

BACKGROUND ART

In the process for manufacturing a semiconductor device, comprising thesteps of forming interconnection-shaped recesses on a surface of theinsulating film on a semiconductor substrate, sedimenting a metal filmmade of copper or the like on the insulating film having the recesses,and subjecting the metal film to polishing treatment by a polishingdevice and a polishing liquid, thereby allowing the metal layer toremain only in the recesses to form a metal interconnection layer,wherein Metal Chemical Mechanical Polishing (hereinafter simply referredto as “metal CMP”) is employed for the process of polishing.

However, in the metal CMP, there arise grooves so-called dishing on themetal interconnection layer in the recesses of the insulating film, sothat the cross-sectional area of the metal interconnection layer isreduced, thereby causing an increase in electric resistivity. Thisdishing is caused by more excessive polishing or etching of the surfaceof the metal interconnection layer than that of the insulating filmsurface by the polishing liquid composition. Especially copper, one ofthe main metal interconnection, has defects of being excessively etchedby the polishing liquid composition, so that the dishing is likely to becaused.

Therefore, there has been desired a polishing liquid composition freefrom defects such as dishing in the metal layer during the formation ofinterconnection, with retaining an etching action for polishing themetal film on the insulating film.

As a conventional polishing liquid, for instance, Japanese PatentLaid-Open Nos. Hei 8-83780 and Hei 11-21546 each discloses a polishingliquid comprising benzotriazole or a derivative thereof as a protectivefilm-forming agent for the metal surface in order to prevent thedishing. Since the formed protective film is rigid, when the metal layeris polished in the metal CMP, the polishing speed would becomeinsufficient. In addition, Japanese Patent Laid-Open No. Hei 11-116942discloses a composition for polishing, comprising a compound having 1 to10 alcoholic hydroxyl groups, or a nitrogen-containing basic compoundhaving 1 to 10 alcoholic hydroxyl groups. This composition for polishinghas a purpose of reducing particles deposited on a wafer surface infinal polishing of the semiconductor wafer, so that the problems to besolved are different.

In addition, Japanese Patent Laid-Open No. Hei 10-44047 discloses apolishing liquid comprising an aqueous medium, an abrasive, an oxidizingagent, and an organic acid. However, since the etching action is toostrong, the prevention for dishing would be insufficient. Further,Japanese Patent Laid-Open No. Hei 11-195628 discloses a process forpolishing in which a polishing liquid is used in combination withammonium polyacrylate as a substance for suppressing oxidation andetching. However, in the metal CMP in which a metal layer made of copperor the like is polished, there arises surface roughening of the coppersurface caused by ammonium polyacrylate.

An object of the present invention is to provide a polishing liquidcomposition capable of maintaining a polishing speed of a metal film,suppressing an etching speed, and having an excellent prevention effectsuch as dishing of the metal interconnection layer, in a surface to bepolished comprising an insulating layer and a metal layer; a process forpolishing; and a process for manufacturing a semiconductor substrate.

These objects and other objects of the present invention will beapparent from the following description.

DISCLOSURE OF INVENTION

Specifically, the present invention relates to:

-   [1] a polishing liquid composition for polishing a surface to be    polished comprising an insulating layer and a metal layer, the    polishing liquid composition comprising a compound having a    structure in which each of two or more adjacent carbon atoms has a    hydroxyl group in a molecule, and water (hereinafter also referred    to “the polishing liquid composition 1-1”);-   [2] a polishing liquid composition for polishing a surface to be    polished comprising an insulating layer and a metal layer, the    polishing liquid composition comprising an aliphatic carboxylic acid    having 7 to 24 carbon atoms and/or a salt thereof, an etching agent,    and water (hereinafter also referred to “the polishing liquid    composition 1-2”);-   [3] a polishing liquid composition for polishing a surface to be    polished comprising an insulating layer and a metal layer, the    polishing liquid composition comprising an amine compound    represented by the following general formula (II):    wherein R³ is a linear or branched alkyl group having 4 to 18 carbon    atoms, a linear or branched alkenyl group having 4 to 18 carbon    atoms, an aryl group having 6 to 18 carbon atoms, and an aralkyl    group having 7 to 18 carbon atoms; each of R⁴ and R⁵, which may be    identical or different, is hydrogen atom, a linear alkyl group    having 1 to 8 carbon atoms or a branched alkyl group having 3 to 8    carbon atoms, or a group represented by H—(OR⁶)_(z)—, wherein R⁶ is    a linear alkylene group having 1 to 3 carbon atoms, or a branched    alkylene group having 3 carbon atoms; and Z is a number of 1 to 20,-   and/or a salt thereof, an etching agent, and water (hereinafter also    referred to “the polishing liquid composition 1-3”);-   [4] the polishing liquid composition according to any one of items    [1] to [3] above, further comprising an oxidizing agent (hereinafter    also referred to “the polishing liquid composition 2”);-   [5] the polishing liquid composition according to any one of items    [1] to [4] above, further comprising an abrasive (hereinafter also    referred to “the polishing liquid composition 3”);-   [6] a process for polishing a semiconductor substrate, comprising    polishing a surface to be polished comprising an insulating layer    and a metal layer using the polishing liquid composition of any one    of items [1 to [5], thereby smoothening the semiconductor substrate;    and-   [7] a process for manufacturing a semiconductor substrate comprising    polishing a surface to be polished comprising an insulating layer    and a metal layer using the polishing liquid composition of any one    of items [1] to [5], thereby smoothening the semiconductor    substrate.

BEST MODE FOR CARRYING OUT THE INVENTION

As mentioned above, the polishing liquid composition of the presentinvention is a polishing liquid composition for polishing a surface tobe polished comprising an insulating layer and a metal layer, and hasthe following three embodiments.

-   

Embodiment 1: A polishing liquid composition comprising a compoundhaving a structure in which each of two or more adjacent carbon atomshas a hydroxyl group in a molecule, and water.

-   Embodiment 2: A polishing liquid composition comprising an aliphatic    carboxylic acid having 7 to 24 carbon atoms and/or a salt thereof,    an etching agent and water.-   Embodiment 3: A polishing liquid composition comprising an amine    compound represented by the following general formula (II):    wherein R³ is a linear or branched alkyl group having 4 to 18 carbon    atoms, a linear or branched alkenyl group having 4 to 18 carbon    atoms, an aryl group having 6 to 18 carbon atoms, and an aralkyl    group having 7 to 18 carbon atoms; and each of R⁴ and R⁵, which may    be identical or different, is hydrogen atom, a linear alkyl group    having 1 to 8 carbon atoms or a branched alkyl group having 3 to 8    carbon atoms, or a group represented by H—(OR⁶)_(z)—, wherein R⁶ is    a linear alkylene group having 1 to 3 carbon atoms, or a branched    alkylene group having 3 carbon atoms; and Z is a number of 1 to 20,-   and/or a salt thereof, an etching agent, and water.

Embodiment 1

In this embodiment, one of the great features resides in the use of acompound having a structure in which each of two or more adjacent carbonatoms has a hydroxyl group in a molecule (hereinafter simply referred toas “hydroxyl group-containing compound”). By the use of the polishingliquid composition comprising the hydroxyl group-containing compound,the polishing speed can be maintained, and excessive etching of a metalfilm in the metal layer can be prevented, so that there is exhibited anexcellent effect that a polishing surface without defects such asdishing can be obtained.

In the hydroxyl group-containing compound, from the viewpoint ofmaintaining the polishing speed and suppressing dishing, the number ofadjacent carbon atoms having a hydroxyl group in a molecule is 2 ormore, preferably from 2 to 10, more preferably from 2 to 7, especiallypreferably from 2 to 4.

In addition, as the structure of the hydroxyl group-containing compound,it is particularly preferable that the structure in which each of two ormore adjacent carbon atoms has a hydroxyl group is present in theterminal portion of a molecule.

Examples thereof include a compound represented by the formula (I):R¹—X—(CH₂)_(q)—[CH(OH)]_(n)—CH₂OH   (I)wherein R¹ is a hydrocarbon group having 1 to 24 carbon atoms; X is agroup represented by (CH₂)_(m), wherein m is 0 or 1, oxygen atom, sulfuratom, COO group, OCO group, a group represented by NR² or O(R²O)P(O)O,wherein R² is hydrogen atom or a hydrocarbon group having 1 to 24 carbonatoms; q is 0 or 1; and n is an integer of 1 to 4.

In the formula (I), the hydrocarbon group of R¹ may be either aliphaticor aromatic group, and the aliphatic group is preferable. The structureof the aliphatic group may be saturated or unsaturated, or linear orbranched. From the viewpoint of suppressing dishing, a saturatedstructure is preferable, and a linear structure is preferable. Inaddition, the number of carbon atoms of the above hydrocarbon groups ispreferably 1 or more, from the viewpoint of suppressing the dishing, andthe number of carbon atoms is preferably 24 or less, from the viewpointof the solubility of the compound represented by the formula (I) inwater. The number of carbon atoms is more preferably from 1 to 18, stillmore preferably from 2 to 12. Each of m and q is preferably 1. Thenumber of carbon atoms of R² is preferably 12 or less, more preferably 8or less, still more preferably 4 or less, from the viewpoint ofsuppressing the dishing. Especially, R² is preferably hydrogen atom ormethyl group. n is preferably 2 or less, more preferably 1, from theviewpoint of suppressing the dishing.

In addition, the hydroxyl group-containing compound may have variousfunctional groups other than hydroxyl group in a molecule. From theviewpoints of maintaining the polishing speed and suppressing thedishing, those compounds which do not contain carboxyl group, sulfonategroup, primary amino group or phenolic hydroxyl group are preferable.

The hydroxyl group-containing compound has a molecular weight ofpreferably 5000 or less, more preferably 1000 or less, especiallypreferably 500 or less, from the viewpoints of maintaining the polishingspeed and suppressing the dishing.

The hydroxyl group-containing compound has an acid dissociation constantpKa in an aqueous solution of preferably 8 or more, more preferably 9 ormore, especially preferably 10 or more, from the viewpoints ofmaintaining the polishing speed and suppressing the dishing. However, ina case where the hydroxyl group-containing compound has two or moredissociable functional groups in a molecule, pKa referred herein is afirst dissociation constant. In addition, the solubility of the hydroxylgroup-containing compound at a pH usable for a polishing liquidcomposition is such that the compound dissolves preferably at 0.5% byweight or more, more preferably at 1.0% by weight or more, in water at25° C., from the viewpoint of formulating the hydroxyl group containingcompound in an aqueous medium.

Concrete examples of these hydroxyl group-containing compounds includealkanediols such as 1,2-butanediol, 1,2-heptanediol, 1,2-hexanediol (“a”in Table 1 mentioned below), and 1,2-octanediol; alkanetriols such as1,2,3-hexanetriol, 1,2,6-hexanetriol, and 1,2,3-heptanetriol; glycerylethers such as butyl glyceryl ether (“b” in Table 1 mentioned below),pentyl glyceryl ether, hexyl glyceryl ether, and octyl glyceryl ether;monoglycerides such as glyceryl monobutanoate, glyceryl monopentanoate,glyceryl monohexanoate, glyceryl monoheptanoate (“c” in Table 1mentioned below), and glyceryl monooctanoate; partially esterifiedproducts prepared by carrying out esterification reaction of gluconicacid and an alcohol such as hexyl alcohol; compounds prepared byreacting glycidol with a monoalkylamine such as hexylamine or adialkylamine such as dipropylamine (“d” in Table 1 mentioned below);diesters of tartaric acid such as diethyl tartrate, dibutyl tartrate,dipropyl tartrate (“e” in Table 1 mentioned below), and dihexyltartrate; 1,2-cyclohexanediol, and the like. Among them, from theviewpoints of maintaining the polishing speed and suppressing thedishing, the alkanediols and the glyceryl ethers are preferable. Thesehydroxyl group-containing compounds may be used alone or in admixture oftwo or more kinds.

The amount of the hydroxyl group-containing compounds formulated ispreferably from 0.01 to 30% by weight, more preferably from 0.05 to 5%by weight, still more preferably from 0.1 to 3% by weight, of thepolishing liquid composition 1-1, from the viewpoints of maintaining thepolishing speed and suppressing the dishing.

Water usable in this embodiment is used as a medium. Its amountformulated is preferably from 60 to 99.99% by weight, more preferablyfrom 70 to 99.4% by weight, still more preferably from 80 to 99.0% byweight, of the polishing liquid composition 1-1, from the viewpoint ofefficiently polishing the substrate to be polished.

The polishing liquid composition 1-1 of this embodiment having thecomposition described above has a pH of preferably from 2 to 11, morepreferably from 2 to 7, still more preferably from 2 to 6, especiallypreferably 3 to 5, from the viewpoints of keeping a polishing speed at apractical level, suppressing the dishing, and removing fine scratchdamages on the surface. In order to adjust the pH within the aboveranges, an inorganic acid such as nitric acid or sulfuric acid, anorganic acid, a basic substance such as potassium hydroxide, sodiumhydroxide, ammonia, or an organic amine can be appropriately added, asoccasion demands.

In addition, the polishing liquid composition 1-1 of this embodiment mayfurther comprise an organic acid.

In this embodiment, since the organic acid is used, the organic acidforms a complex with or binds to various metals, especially copper,constituting the metal layer, so that the metal layer is made brittle,whereby exhibiting an effect that the removal of the metal layer is madeeasy during polishing.

In addition, especially, the organic acid can be used in combinationwith a compound having a structure in which each of two or more adjacentcarbon atoms has a hydroxyl group in a molecule, whereby maintaining thepolishing speed and preventing the dishing.

The organic acid is an organic compound showing acidic property. Theseorganic compounds showing acidic property include those havingfunctional groups such as carboxyl group, phosphonic group, phosphinicgroup, sulfonic group, sulfinic group, phenol group, enol group,thiophenol group, imido group, oxime group, aromatic sulfamide groups,and primary and secondary nitro groups.

The organic acid usable in this embodiment has a molecular weight ofpreferably 1000 or less, more preferably 500 or less.

The organic acid having carboxyl group includes monocarboxylic acidshaving 1 to 24 carbon atoms, dicarboxylic acids, hydroxycarboxylic acidsand aminocarboxylic acids are preferable, from the viewpoint of thesolubility in water. The number of carbon atoms is more preferably 1 to18 carbon atoms, still more preferably 1 to 12 carbon atoms, especiallypreferably 1 to 8 carbon atoms, most preferably 1 to 6 carbon atoms.Concrete examples thereof include monocarboxylic acids, such as formicacid, acetic acid, propionic acid, butyric acid, valerianic acid,caproic acid, and pyruvic acid; dicarboxylic acids such as oxalic acid,malonic acid, succinic acid, glutaric acid, and adipic acid;hydroxycarboxylic acids such as gluconic acid, tartaric acid, glycolicacid, lactic acid, citric acid, and malic acid; aminocarboxylic acidsuch as nitrilotriacetic acid. The organic acid having phosphonic groupincludes aminotri(methylenephosphonic acid),1-hydroxyethylidene-1,1-diphosphonic acid,ethylenediaminetetra(methylenephosphonic acid),hexamethylenediaminetetra(methylenephosphonic acid),diethylenetriaminepenta(methylenephosphonic acid); the organic acidhaving phosphinic group includes ethyl phosphite, and the like; theorganic acid having sulfonic group includes methanesulfonic acid,benzenesulfonic acid, ptoluenesulfonic acid, naphthalenesulfonic acid,and the like; the organic acid having sulfinic group includesbenzenesulfinic acid, p-toluenesulfinic acid, and the like. Among them,the organic acids having carboxyl group are preferable. More concretely,monocarboxylic acids, dicarboxylic acids, hydroxycarboxylic acids andaminocarboxylic acids are preferable, and acetic acid, oxalic acid,succinic acid, glycolic acid, lactic acid, citric acid, malic acid,tartaric acid, gluconic acid and nitrilotriacetic acid are morepreferable, and glycolic acid and gluconic acid are still morepreferable. These organic acids may be used alone or in admixture of twoor more kinds.

The organic acid is used in a state in which water is used as a mediumin the polishing liquid composition 1-1. The amount of the organic acidformulated in the polishing liquid composition 1-1 can be widelyselected for the purposes of securing the polishing speed at a practicallevel to remove the metal layer, and preventing excessive etching of themetal layer. The amount of the organic acid formulated is, for instance,preferably from 0.1 to 10% by weight, more preferably from 0.2 to 8% byweight, still more preferably from 0.3 to 5% by weight.

In addition, among the above organic acids, a compound capable ofdissolving and etching a metal, especially copper in the copresence ofan aqueous medium, and having an etching speed “a” of 3 Å/min or more,as obtained by the following etching test A can be used as an etchingagent. Specifically, in the etching test A, first a copper ribbon(commercially available from K.K. Nirako; thickness: 0.10 mm, width: 6mm) having a length of 100 mm is furnished, and the surface dirt or thelike is wiped of with a sheet of paper. Thereafter, the copper ribbon issubjected to ultrasonic cleaning for one minute in a state of beingimmersed in normal hexane, and thereafter the surface is sufficientlydegreased and dried. Subsequently, its metal test piece is coiled into ahelical form so that an entire surface of the ribbon is immersed in thepolishing liquid, to give a metal test piece before test. The weightbefore immersion is determined by accurate balance.

Next, the etching agent is diluted to give a 2% by weight aqueoussolution thereof. Further, 100 g of the etching solution of which pH isadjusted to 8±0.5 with aqueous ammonia is furnished in a 150 cc beaker(K. K. Teraoka, 150 cc disposable cup), and the above metal test pieceis immersed at 25° C. for 12 hours. During immersion, the etchingsolution is stirred with a magnetic stirrer, to an extent that thecopper ribbon rotates along with the flow of the etching solution. Afterthe test, the copper ribbon surface is sufficiently wiped off, and itsweight is again determined by accurate balance, to give a weight afterthe test. The amount of reduced thickness of copper is calculated fromthe weight loss of the copper ribbon before and after the test, and theresulting amount is divided by the etching time period to determine anetching speed “a.” From the viewpoint of obtaining a practical polishingspeed, an etching agent having an etching speed “a” obtainable from theabove etching test of 3 Å/min or more is preferable, more preferably 5Å/min or more, still more preferably 10 Å/min or more. The etching speed“a” in this case may be an etching speed of two or more etching agentsused in combination.

In addition, as the etching agent, an inorganic acid which is capable ofdissolving and etching a metal, especially copper, in the copresence ofan aqueous medium, and having an etching speed “a” obtainable from theabove etching test A of 3 Å/min or more can be used.

Among the organic acids, from the viewpoint of having an appropriateetching speed, preferable etching agents include one or more compoundsselected from the group consisting of the following A to D. Also, thefollowing inorganic acids E are usable as an etching agent.

-   A: aliphatic organic acids having 6 or less carbon atoms and one to    three carboxyl groups;-   B: aromatic organic acids having 7 to 10 carbon atoms and one to    four carboxyl groups;-   C: organic acids having 6 or less carbon atoms and one to four    phosphonic groups;-   D: polyaminocarboxylic acids having in a molecule two or more    structures represented by the formula (III):    and-   E: inorganic acids.

Concretely, the aliphatic organic acid of the group A having 6 or lesscarbon atoms and one to three carboxyl groups includes monocarboxylicadds, such as formic acid, acetic acid, and propionic acid;polycarboxylic acids, such as oxalic acid, malonic acid, succinic acid,glutaric acid, adipic acid, and tricarballylic acid; hydroxycarboxylicacids such as glycolic add, lactic acid, 2-hydroxypropionic acid, malicacid, tartaric acid, citric acid, and gluconic add; amino acids such asglycine, alanine, and aspartic add; and the like. The aromatic organicacid of the group B having 7 to 10 carbon atoms and one to four carboxylgroups includes benzoic acid, phthalic acid, trimellitic add,pyromellitic acid, mandelic add, salicylic add, and the like. Theorganic acid of the group C having 6 or less carbon atoms and one tofour phosphonic groups includes phosphonic adds such as methylphosphonicadd and phenylphosphonic add; phosphinic acids such as methylphosphinicacid and phenylphosphinic acid; phosphonic acid esters such as methylester of phosphonic acid; aminophosphonic acids such asaminotri(methylenephosphonic add) and 1-hydroxyethylidene-1-diphosphonicacid; and the like. The polyaminocarboxylic acid of the group D havingin a molecule two or more structures represented by the formula (III)includes ethylenediaminetetraacetic acid, nitrilotriacetic add,diethylenediaminepentaacetic acid, triethylenetetraminehexaacetic acid,hydroxyethylethylenediaminetetraacetic acid, and the like. The inorganicacid of the group E includes hydrochloric acid, perchloric acid,sulfuric acid, nitric acid, phosphoric acid, phosphonic acid, phosphinicacid, and the like. Among them, from the viewpoint of the polishingspeed, preferable are the polycarboxylic acids or hydroxycarboxylicacids belonging to the group A or B; aminophosphonic acids belonging tothe group C; polyaminocarboxylic acids of the group D having in amolecule two or more structures represented by the formula (III); andhydrochloric acid, sulfuric acid, nitric acid, and phosphoric acidbelonging to the group E. More preferable are oxalic acid, succinicacid, glycolic acid, lactic acid, citric acid, malic acid, gluconicacid, phthalic acid, aminotri(methylenephosphonic acid),1-hydroxyethylidene-1-diphosphonic acid, ethylenediaminetetraaceticacid, hydrochloric acid, and sulfuric acid. These etching agents may beused alone or in admixture of two or more kinds. In this embodiment,glycolic acid and gluconic acid are especially preferable.

These etching agents, for instance, have the following etching speed“a”: Glycolic acid, 60 Å/min; citric acid, 25 Å/min; phthalic acid, 50Å/min; aminotri(methylenephosphonic acid), 10 Å/min;ethylenediaminetetraacetic acid, 30 Å/min; acetic acid, 70 Å/min,glycine, 40 Å/min; hydrochloric acid, 400 Å/min; and sulfuric acid, 100Å/min.

When the etching agent usable in this embodiment is used in thepreparation of a polishing liquid composition, with proviso that thecomposition does not comprise the hydroxyl group-containing compound, inwhich an oxidizing agent, abrasive grains, and the like are furthercopresent, it is preferable to adjust the kinds, contents, and the like,so that the etching liquid composition has an etching speed “b”obtainable from the following etching test B of 20 Å/min or more. Theetching test B is carried out in the same procedures as in the etchingtest A, except that the copper ribbon is immersed in a polishing liquidcomposition comprising, as an etching solution of the etching test A,water, an abrasive and an etching agent, and, if necessary, an oxidizingagent, at room temperature (25° C.) for 2 hours, and that the pH isadjusted to 4.0±0.5. The etching speed obtained by the etching test B isreferred to as “etching speed ‘b’.” From the viewpoint of obtaining apractical polishing speed, the etching speed “b” obtainable from theabove etching test B is preferably 20 Å/min or more, more preferably 30Å/min or more, still more preferably 50 Å/min or more. The etching speed“b” in this case may be an etching speed of a polishing liquidcomposition in which two or more etching agents are used in combination.

In this embodiment, since the etching agent is used, the etching agentforms a complex with or binds to various metals, especially copper,constituting the metal layer, so that the removal of the metals is madeeasy as water-soluble salts and/or chelated compounds, wherebyexhibiting an effect that the polishing speed of the metal layer isincreased during polishing.

The amount of the etching agent formulated in the polishing liquidcomposition 1-1 can be variously selected in order to secure thepolishing speed at a practical level to remove the metal layer, and toprevent excessive etching of the metal layer. The amount of the etchingagent formulated is preferably from 0.1 to 10% by weight, morepreferably from 0.2 to 8% by weight, still more preferably from 0.3 to5% by weight, of the polishing liquid composition 1-1.

Embodiment 2

In this embodiment, one of the largest features resides in that theabove aliphatic carboxylic acid having 7 to 24 carbon atoms and/or asalt thereof and the etching agent are used in combination. Since thealiphatic carboxylic acid having 7 to 24 carbon atoms and/or a saltthereof has an action of lowering the etching speed, the polishing speedat a practical level can be maintained and excessive etching of themetal film in the metal layer can be prevented by the use of a polishingliquid composition comprising these compounds and the etching agent.Therefore, there is exhibited an excellent effect that the polishingsurface without defects such as dishing can be obtained.

From the viewpoints of maintaining the polishing speed and suppressingthe dishing, the aliphatic carboxylic acid and/or a salt thereof has 7to 24 carbon atoms. Further, from the viewpoints of keeping thesolubility in the polishing liquid, the low-foamability, and thepolishing speed at practical levels, and suppressing the dishing, thesecompounds have preferably from 7 to 20 carbon atoms, more preferablyfrom 7 to 16 carbon atoms, still more preferably from 7 to 12 carbonatoms, especially preferably from 7 to 10 carbon atoms.

In addition, the hydrocarbon group of the aliphatic carboxylic acidand/or a salt thereof may be saturated or unsaturated, or linear orbranched.

In addition, the salts of the aliphatic carboxylic acids may be any ofammonium salts, salts of organic amines, and alkali metal salts. Fromthe viewpoint of preventing staining of the semiconductors, ammoniumsalts, and salts of organic amines such as salts of monoethanolamine,salts of diethanolamine, salts of triethanolamine, and salts oftriethylamine.

Concrete examples of these aliphatic carboxylic acids and salts thereofinclude linear, saturated aliphatic carboxylic acids such as heptanoicacid, octanoic acid, nonanoic acid, decanoic acid, lauric acid, myristicacid, palmitic acid, stearic acid, and eicosanoic add; linear,unsaturated aliphatic carboxylic acids such as heptenoic acid, octenoicadd, decenoic acid, dodecenoic, and oleic acid; branched, saturatedaliphatic carboxylic acids such as 2-methylhexanoic acid,2-ethylhexanoic acid, 3,5-dimethylhexanoic acid, 3,5,5-trimethylhexanoicacid, and isodecanoic acid; and ammonium salts, salts of organic amines,alkali metal salts of these aliphatic carboxylic acids, and the like.Among them, from the viewpoints of the polishing speed and thesuppression of the dishing, the linear or branched, saturated aliphaticcarboxylic acids and ammonium salts thereof are preferable, and from theviewpoint of the solubility in the polishing liquid and the lowfoamability, heptanoic acid or ammonium salt thereof, octanoic acid orammonium salt thereof, nonanoic add or ammonium salt thereof, anddecanoic acid or ammonium salt thereof are especially preferable. Thesealiphatic carboxylic acids having 7 to 24 carbon atoms and salts thereofmay be used alone or in admixture of two or more kinds.

The amount of the aliphatic carboxylic acid and a salt thereofformulated is preferably from 0.01 to 30% by weight, more preferablyfrom 0.02 to 10% by weight, still more preferably from 0.03 to 5% byweight, of the polishing liquid composition 1-2, from the viewpoint ofmaintaining the polishing speed, and suppressing the dishing.

The etching agent usable in this embodiment is capable of dissolving andetching a metal, especially copper, in the copresence of an aqueousmedium, and is a compound having an etching speed “a” of 3 Å/min ormore, as obtained by the etching test A described in Embodiment 1. Fromthe viewpoint of obtaining a practical polishing speed, an etching agenthaving an etching speed “a” obtainable from the above etching test A of3 Å/min or more is preferable, more preferably 5 Å/min or more, stillmore preferably 10 Å/min or more. The etching speed “a” in this case maybe an etching speed of two or more etching agents used in combination.

Preferable etching agents include the same ones as those in Embodiment 1mentioned above. These etching agents may be used alone or in admixtureof two or more kinds. In this embodiment, glycolic acid, citric acid,and aminotri(methylenephosphonic acid) are especially preferable.Incidentally, the etching speed “a” of the aliphatic carboxylic acidhaving 7 to 24 carbon atoms is 2 Å/min or less, and as compared to theetching agent, the etching strength is none or almost not found.

When the etching agent usable in this embodiment is used in thepreparation of a polishing liquid composition, with proviso that thecomposition does not comprise the aliphatic carboxylic acid having 7 to24 carbon atoms and/or a salt thereof, in which an oxidizing agent,abrasive grains, and the like are further copresent, it is preferable toadjust the kinds, contents, and the like, so that the polishing liquidcomposition has an etching speed “c” obtainable from the followingetching test C of 20 Å/min or more. The etching test C is carried out inthe same procedures as in the etching test A, except that the copperribbon is immersed in a polishing liquid composition comprising, as anetching solution of the etching test A, water, an abrasive and anetching agent, and, if necessary, an oxidizing agent, at roomtemperature (25° C.) for 2 hours. The etching speed obtained by theetching test C is referred to as “etching speed ‘c’.” From the viewpointof obtaining a practical polishing speed, the etching speed “c”obtainable from the above etching test C is preferably 20 Å/min or more,more preferably 30 Å/min or more, still more preferably 50 Å/min ormore. The etching speed “c” in this case may be an etching speed of apolishing liquid composition in which two or more etching agents areused in combination.

In this embodiment, since the etching agent is used, the etching agentforms a complex with or binds to various metals, especially copper,constituting the metal layer, so that the removal of the metals is madeeasy as water-soluble salts and/or chelated compounds, wherebyexhibiting an effect that the polishing speed of the metal layer isincreased during polishing.

The amount of the etching agent formulated in the polishing liquidcomposition 1-2 can be variously selected in order to secure thepolishing speed at a practical level to remove the metal layer, and toprevent excessive etching of the metal layer. The amount of the etchingagent formulated is preferably from 0.1 to 10% by weight, morepreferably from 0.2 to 8% by weight, still more preferably from 0.3 to5% by weight, of the polishing liquid composition 1-2.

Water usable in this embodiment is used as a medium. The amount of waterformulated is preferably from 60 to 99.89% by weight, more preferablyfrom 70 to 99.4% by weight, still more preferably from 80 to 99% byweight, of the polishing liquid composition 1-2, from the viewpoint ofefficiently polishing the substrate to be polished.

The polishing liquid composition 1-2 of this embodiment having thecomposition described above has a pH of preferably 10 or less, morepreferably from 2 to 9.5, still more preferably from 4 to 9, especiallypreferably from 7 to 9, from the viewpoints of keeping a polishing speedat a practical level, suppressing the dishing, and removing fine scratchdamages on the surface. In order to adjust the pH within the aboveranges, an inorganic acid such as nitric acid or sulfuric acid; anorganic acid; a basic substance such as potassium hydroxide, sodiumhydroxide, ammonia, or an organic amine can be appropriately added, asoccasion demands.

Embodiment 3

In this embodiment, one of the largest features resides in that theabove amine compound represented by the general formula (II) and/or asalt thereof and the etching agent are used in combination. Thepolishing speed at a practical level can be maintained and excessiveetching of the metal film of the metal layer can be prevented by the useof a polishing liquid composition comprising the amine compound and/or asalt thereof, and the etching agent. Therefore, there is exhibited anexcellent effect that the polishing surface without defects such asdishing can be obtained.

The above amine compound represented by the general formula (II) and/ora salt thereof usable in this embodiment is preferable, from theviewpoints of maintaining the polishing speed and suppressing thedishing. Further, from the viewpoints of keeping the low foamability andthe polishing speed at practical levels and suppressing the dishing, inthe formula, R³ is preferably a linear or branched, alkyl or alkenylgroup having 5 to 14 carbon atoms, more preferably a linear or branched,alkyl or alkenyl group having 6 to 12 carbon atoms, still morepreferably a linear or branched, alkyl or alkenyl group having 7 to 10carbon atoms. Each of R⁴ and R⁵ is preferably hydrogen, a linear alkylgroup having 1 or 2 carbon atoms, a group represented by H—(OR⁶)_(z)—,wherein R⁶ is an alkylene group having 2 carbon atoms and Z is a numberfrom 1 to 4, and more preferably hydrogen atom, methyl group andhydroxyethyl group.

In addition, the salt of the amine compound may be either a salt with aninorganic acid or a salt with an organic acid, and those which are asalt with an inorganic acid or organic acid which is usable as anetching agent are preferable. Further, from the viewpoint of preventingstaining of the semiconductor, salts of organic acids are morepreferable among the etching agents.

Concrete examples of these amine compounds and salts thereof includelinear monoalkylamines such as butylamine, pentylamine, hexylamine,heptylamine, octylamine, nonylamine, decylamine, laurylamine,myristylamine, and stearylamine; linear monoalkenylamines such asoleylamine; branched monoalkylamines such as 2-ethylhexylamine;dialkylamines such as dihexylamine and dioctylamine; trialkylamines suchas dimethyloctylamine, dimethyldecylamine, and dimethyldodecylamine;alkylalkanolamines such as octyldiethanolamine, decyldiethanolamine, anddodecyldiethanolamine; and carboxylates, phosphates, hydrochlorides,sulfates, nitrates, and the like of these amine compounds. Among them,from the viewpoints of maintaining the polishing speed and suppressingthe dishing, monoalkylamines, monoalkyldimethylamines, andmonoalkyldiethanolamines, each of which is linear or branched, andcarboxylates thereof are preferable. Further, from the viewpoint of thelow foamability, more preferable are heptylamine, octylamine,nonylamine, dimethyloctylamine, dimethyldecylamine, dimethyldodecylamineoctyldiethanolamine, decyldiethanolamine, and carboxylates thereof.These amine compounds and salts thereof may be used alone or inadmixture of two or more kinds.

The amount of the amine compound and a salt thereof formulated ispreferably from 0.01 to 30% by weight, more preferably from 0.02 to 10%by weight, still more preferably from 0.03 to 5% by weight, of thepolishing liquid composition 1-3, from the viewpoint of maintaining thepolishing speed, and suppressing the dishing.

The etching agent usable in this embodiment is capable of dissolving andetching a metal, especially copper, in the copresence of an aqueousmedium, and is a compound having an etching speed “a” of 3 Å/min ormore, as obtained by the etching test A described in Embodiment 1. Fromthe viewpoint of obtaining a practical polishing speed, an etching agenthaving an etching speed “a” obtainable from the above etching test A of3 Å/min or more is preferable, more preferably 5 Å/min or more, stillmore preferably 10 Å/min or more. The etching speed “a” in this case maybe an etching speed of two or more etching agents used in combination.

Preferable etching agents include the same ones as those in Embodiment 1mentioned above. These etching agents may be used alone or in admixtureof two or more kinds. In this embodiment, glycolic acid, citric acid,and aminotri(methylenephosphonic acid) are especially preferable.

When the etching agent usable in this embodiment is used in thepreparation of a polishing liquid composition, with proviso that thecomposition does not comprise the above amine compound or a saltthereof, in which an oxidizing agent, abrasive grains, and the like arefurther copresent, it is preferable to adjust the kinds, contents, andthe like, so that the polishing liquid composition has an etching speed“c” obtainable from the etching test C described in Embodiment 2 of 20Å/min or more. From the viewpoint of obtaining a practical polishingspeed, the etching speed “c” obtainable from the above etching test C ispreferably 20 Å/min or more, more preferably 30 Å/min or more, stillmore preferably 50 Å/min or more. The etching speed “c” in this case maybe an etching speed of a polishing liquid composition in which two ormore etching agents are used in combination.

In this embodiment, since the etching agent is used, the etching agentforms a complex with or binds to various metals, especially copper,constituting the metal layer, so that the removal of the metals is madeeasy as water-soluble salts and/or chelated compounds, wherebyexhibiting an effect that the polishing speed of the metal layer isincreased during polishing.

The amount of the etching agent formulated in the polishing liquidcomposition 1-3 can be variously selected in order to secure thepolishing speed at a practical level to remove the metal layer, and toprevent excessive etching of the metal layer. The amount of the etchingagent formulated is preferably from 0.1 to 10% by weight, morepreferably from 0.2 to 8% by weight, still more preferably from 0.3 to5% by weight, of the polishing liquid composition 1-3.

Water usable in this embodiment is used as a medium. The amount thereofis preferably from 60 to 99.89% by weight, more preferably from 70 to99.4% by weight, still more preferably from 80 to 99% by weight, of thepolishing liquid composition 1-3, from the viewpoint of efficientlypolishing the substrate to be polished.

The polishing liquid composition 1-3 of this embodiment having thecomposition described above has a pH of preferably 10 or less, morepreferably from 2 to 9.5, still more preferably from 4 to 9, especiallypreferably from 5 to 9, from the viewpoints of keeping a polishing speedat a practical level, suppressing the dishing, and removing fine scratchdamages on the surface. In order to adjust the pH within the aboveranges, an inorganic acid such as nitric acid or sulfuric acid, anorganic acid, a basic substance such as potassium hydroxide, sodiumhydroxide, ammonia, or an organic amine can be appropriately added, asoccasion demands.

The polishing liquid composition 2 comprises one of the polishing liquidcompositions 1-1 to 1-3 (hereinafter collectively referred to as “thepolishing liquid composition 1”), and further comprising an oxidizingagent. The oxidizing agent usable in the present invention refers tothose oxidizing a metal. In the present invention, it is thought thatthe metal layer is oxidized by the use of the oxidizing agent, wherebyan effect of accelerating the mechanical polishing effect of the metallayer is exhibited.

The oxidizing agent includes, peroxides; permanganic acid or saltsthereof, chromic acid or salts thereof, nitric acid or salts thereof,peroxo acid or salts thereof, oxyacid or salts thereof metal salts;sulfuric acid, and the like.

As concrete examples thereof, the peroxide includes hydrogen peroxide,sodium peroxide, barium peroxide, and the like; the permanganic acid orsalts thereof include potassium permanganate, and the like; chromic acidor salts thereof include metal salts of chromic acid, metal salts ofdichromic acid, and the like; the nitrates include iron (III) nitrate,ammonium nitrate, and the like; the peroxo acid or salts thereof includeperoxodisulfuric acid, ammonium peroxodisulfate, metal salts ofperoxodisulfuric acid, peroxophosphoric acid, peroxosulfuric acid,sodium peroxoborate, performic acid, peracetic acid, perbenzoic acid,perphthalic acid, and the like; the oxyacid or salts thereof includehypochlorous acid, hypobromous acid, hypoiodous acid, chloric acid,bromic acid, iodic acid, perchloric acid, sodium hypochlorite, calciumhypochlorite, and the like; metal salts include iron (III) chloride,iron (III) sulfate, iron (III) citrate, ammonium iron (III) sulfate, andthe like. Among the oxidizing agents, hydrogen peroxide, iron (III)nitrate, peracetic acid, ammonium peroxodisulfate, iron (III) sulfateand ammonium iron (III) sulfate are preferable, and especially hydrogenperoxide is preferable. These oxidizing agents may be used alone or inadmixture of two or more kinds.

The oxidizing agent is used in a state in which water is used as amedium in the polishing liquid composition 2. The amount of theoxidizing agent formulated is preferably from 0. 1 to 60% by weight,more preferably from 0.2 to 50% by weight, still more preferably from0.3 to 30% by weight, especially preferably from 0.3 to 10% by weight,of the polishing liquid composition 2, from the viewpoint of obtainingthe polishing speed at a practical level by rapid oxidation of the metallayer.

In addition, when the polishing liquid composition 2 is prepared fromthe polishing liquid composition 1-1, the amount of the hydroxylgroup-containing compound formulated is preferably from 0.01 to 30% byweight, more preferably from 0.05 to 5% by weight, still more preferablyfrom 0.1 to 3% by weight, of the polishing liquid composition 2. Theamount of water formulated is preferably from 40 to 99.89% by weight,more preferably from 70 to 99.4% by weight, still more preferably from80 to 99% by weight, of the polishing liquid composition 2. The pH ofthe polishing liquid composition 2 having the above composition, whichis the same as the polishing liquid composition 1-1, is preferably from2 to 11, more preferably from 2 to 7, still more preferably 2 to 6,especially preferably from 3 to 5, from the viewpoints of keeping thepolishing speed at a practical level, suppressing the dishing, andremoving the fine scratch damages on the surface. In order to adjust thepH to the above-specified range, there may be added at an appropriatetiming an inorganic acid such as nitric acid or sulfuric acid, anorganic acid, or a basic substance such as potassium hydroxide, sodiumhydroxide, ammonia, or an organic amine.

In addition, when the polishing liquid composition 2 is prepared fromthe polishing liquid composition 1-2, the amount of the aliphaticcarboxylic acid having 7 to 24 carbon atoms and/or salts thereofformulated is preferably from 0.01 to 30% by weight, more preferablyfrom 0.02 to 10% by weight, still more preferably from 0.03 to 5% byweight, of the polishing liquid composition 2. The amount of the etchingagent formulated is preferably from 0.1 to 10% by weight, morepreferably from 0.2 to 8% by weight, still more preferably from 0.3 to5% by weight, of the polishing liquid composition 2. The amount of waterformulated is preferably from 39.89 to 99.79% by weight, more preferablyfrom 70 to 99.4% by weight, still more preferably from 80 to 99% byweight, of the polishing liquid composition 2. The pH of the polishingliquid composition 2 having the above composition, which is the same asthe polishing liquid composition 1-2, is preferably 10 or less, morepreferably from 2 to 9.5, still more preferably 4 to 9, especiallypreferably from 7 to 9, from the viewpoints of keeping the polishingspeed at a practical level, suppressing the dishing, and removing thefine scratch damages on the surface.

In addition, when the polishing liquid composition 2 is prepared fromthe polishing liquid composition 1-3, the amount of the amine compoundand/or salts thereof formulated is preferably from 0.01 to 30% byweight, more preferably from 0.02 to 10% by weight, still morepreferably from 0.03 to 5% by weight, of the polishing liquidcomposition 2. The amount of the etching agent formulated is preferablyfrom 0.1 to 10% by weight, more preferably from 0.2 to 8% by weight,still more preferably from 0.3 to 5% by weight, of the polishing liquidcomposition 2. The amount of water formulated is preferably from 39.89to 99.79% by weight, more preferably from 70 to 99.4% by weight, stillmore preferably from 80 to 99% by weight, of the polishing liquidcomposition 2. The pH of the polishing liquid composition 2 having theabove composition, which is the same as the polishing liquid composition1-3, is preferably 10 or less, more preferably from 2 to 9.5, still morepreferably 4 to 9, especially preferably from 5 to 9, from theviewpoints of keeping the polishing speed at a practical level,suppressing the dishing, and removing the fine scratch damages on thesurface.

The polishing liquid compositions 1 and 2 of the present invention areeffective for polishing processes using a fixed grinding wheel, apolishing pad in which abrasive grains are fixed to the pad, and thelike. For instance, by the use of the polishing liquid compositions 1and 2 of the present invention during polishing in the polishing processusing the fixed grinding wheel, the polishing speed can be maintained,and the dishing of the metal layer can be suppressed.

The polishing liquid composition 3 of the present invention is onefurther comprising an abrasive to a polishing liquid composition 1 or 2,which is usable for a polishing process by loose abrasives.

As the abrasive, abrasives generally employed for polishing can be used.The abrasive includes, for instance, metals, carbides of metals ormetalloids, nitrides of metals or metalloids, oxides of metals ormetalloids, borides of metals or metalloids, diamond, and the like. Themetals or metalloids include those elements belonging to the Groups 3A,4A, 5A, 3B, 4B, 5B, GB, 7B or 8B of the Periodic Table. Examples thereofinclude silicon dioxide, aluminum oxide, cerium oxide, titanium oxide,zirconium oxide, silicon nitride, manganese dioxide, silicon carbide,zinc oxide, diamond, and magnesium oxide. Among them, silicon dioxide,aluminum oxide and cerium oxide are preferable. As concrete examplesthereof, the silicon dioxide includes colloidal silica particles, fumedsilica particles, surface-modified silica particles, and the like; thealuminum oxide includes α-alumina particles, γ-alumina particles,δ-alumina particles, θ-alumina particles, η-alumina particles, amorphousalumina particles, and other fumed alumina or colloidal alumina preparedby different process; the cerium oxide includes ones having oxidationstate of 3 or 4, of which crystal system is hexagonal system, isometricsystem, or face-centered cubic system, and the like. The silicon dioxideis especially preferable. These abrasives may be used alone or inadmixture of two or more kinds.

The abrasive has a primary average particle size of preferably from 5 to1000 nm, more preferably from 10 to 500 nm, still more preferably from20 to 300 nm, especially preferably from 50 to 200 nm, most preferablyfrom 50 to 100 nm. The lower limit of the average particle size ispreferably 5 nm or more, from the viewpoint of maintaining a givenpolishing speed, and the upper limit thereof is preferably 1000 nm orless, form the viewpoint of preventing the generation of scratches onthe surface of the substrate to be polished.

Especially when the silicon dioxide is used as an abrasive, the silicondioxide has a primary average particle size of 5 nm or more, preferably10 nm or more, more preferably 20 nm or more, from the viewpoint of 20improving the polishing speed.

Incidentally, the primary average particle size of the abrasive isdetermined by adding 0.1 g of the abrasive to 100 g of a 0.1% aqueoussolution of sodium polystyrenesulfonate, thereafter applying ultrasonicwaves, to disperse the abrasive, and measuring image analysis of thedispersion by observing with a transmission electron microscope.

When the polishing liquid composition 3 is used when forminginterconnection of a semiconductor device, especially preferably usableabrasives are silica particles having purity of preferably 98% by weightor more, more preferably 99% by weight or more, especially preferably99.9% by weight or more. The abrasive includes fumed silica prepared bysubjecting a volatile silicon compound such as silicon tetrachloride tohigh-temperature hydrolysis in oxyhydrogen flame; or colloidal silicaobtained by a process in which an alkali silicate or ethyl silicate isused as a starting material.

Incidentally, the purity of the above abrasive is obtained as follows.Specifically, the purity can be determined I y dissolving 1 to 3 g of anabrasive in an acid or an aqueous alkali, and quantifying silicon ionsby ICP (plasma emission analysis).

The abrasive is used in a so-called “slurry state” using water as amedium in the polishing liquid composition 3. The amount of the abrasiveformulated in the polishing liquid composition 3 can be variouslyselected depending upon the viscosity of the polishing liquidcomposition and the required quality of the substrate to be polished,and the like. The amount of the abrasive formulated is preferably from0.01 to 30% by weight, more preferably from 0.02 to 20% by weight, stillmore preferably from 0.1 to 20% by weight, especially preferably from1.0 to 10% by weight, of the polishing liquid composition 3.

In addition, when the polishing liquid composition 3 is prepared fromthe polishing liquid composition 1-1 (hereinafter referred to as“polishing liquid composition 3-1”), the amount of the hydroxyl-groupcontaining compound formulated is preferably from 0.01 to 30% by weight,more preferably from 0.05 to 5% by weight, still more preferably from0.1 to 3% by weight, of the polishing liquid composition 3-1, from theviewpoints of maintaining the polishing speed and suppressing thedishing.

The amount of the organic acid formulated in the polishing liquidcomposition 3-1 can be variously selected in order to secure a polishingspeed at a practical level for removal of the metal layer, and toprevent excessive etching of the metal layer. The amount is, forinstance, preferably from 0.1 to 10% by weight, more preferably from 0.2to 8% by weight, still more preferably from 0.3 to 5% by weight, of thepolishing liquid composition 3-1.

The amount of the oxidizing agent formulated is preferably from 0.1 to60% by weight, more preferably from 0.2 to 50% by weight, still morepreferably from 0.3 to 30% by weight, of the polishing liquidcomposition 3-1, from the viewpoint of obtaining a polishing speed at apractical level by rapid oxidation of the metal layer.

The amount of water formulated is preferably from 40 to 99.98% byweight, more preferably from 60 to 99.4% by weight, still morepreferably from 75 to 99% by weight, of the polishing liquid composition3-1. The pH of the polishing liquid composition 3-1 having the abovecomposition, which is the same as the polishing liquid composition 1-1,is preferably from 2 to 11, more preferably from 2 to 7, still morepreferably 2 to 6, especially preferably from 3 to 5, from theviewpoints of keeping the polishing speed at a practical level,suppressing the dishing, and removing the fine scratch damages on thesurface.

In addition, when the polishing liquid composition 3 is prepared fromthe polishing liquid composition 1-2 (hereinafter referred to as“polishing liquid composition 3-2”), the amount of the aliphaticcarboxylic acid having 7 to 24 carbon atoms and/or salts thereofformulated is preferably from 0.01 to 30% by weight, more preferablyfrom 0.02 to 10% by weight, still more preferably from 0.03 to 5% byweight, of the polishing liquid composition 3-2, from the viewpoints ofmaintaining the polishing speed and suppressing the dishing.

The amount of the etching agent formulated in the polishing liquidcomposition 3-2 can be variously selected in order to secure a polishingspeed at a practical level for removal of the metal layer, and toprevent excessive etching of the metal layer. The amount formulated is,for instance, preferably from 0.1 to 10% by weight, more preferably from0.2 to 8% by weight, still more preferably from 0.3 to 5% by weight, ofthe polishing liquid composition 3-2.

The amount of the oxidizing agent formulated is preferably from 0.1 to60% by weight, more preferably from 0.2 to 50% by weight, still morepreferably from 0.3 to 30% by weight, especially preferably from 0.3 to10% by weight, of the polishing liquid composition 3-2, from theviewpoint of obtaining a polishing speed at a practical level by rapidoxidation of the metal layer.

The amount of water formulated is preferably from 39.88 to 99.88% byweight, more preferably from 60 to 99.4% by weight, still morepreferably from 75 to 99% by weight, of the polishing liquid composition3-2. The pH of the polishing liquid composition 3-2 having the abovecomposition, which is the same as the polishing liquid composition 1-2,is preferably 10 or less, more preferably from 2 to 9.5, still morepreferably from 4 to 9, especially preferably from 7 to 9, from theviewpoints of keeping the polishing speed at a practical level,suppressing the dishing, and removing the fine scratch damages on thesurface. In order to adjust the pH within the above ranges, an inorganicacid such as nitric acid or sulfuric acid, an organic acid, a basicsubstance such as potassium hydroxide, sodium hydroxide, ammonia, or anorganic amine can be appropriately added, as occasion demands.

In addition, when the polishing liquid composition 3 is prepared fromthe polishing liquid composition 1-3 (hereinafter referred to as“polishing liquid composition 3-3”), the amount of the amine compoundand/or salts thereof formulated is preferably from 0.01 to 30% byweight, more preferably from 0.02 to 10% by weight, still morepreferably from 0.03 to 5% by weight, of the polishing liquidcomposition 3-3, from the viewpoints of maintaining the polishing speedand suppressing the dishing.

The amount of the etching agent formulated in the polishing liquidcomposition 3-3 can be variously selected in order to secure a polishingspeed at a practical level for removal of the metal layer, and toprevent excessive etching of the metal layer. The amount formulated is,for instance, preferably from 0.1 to 10% by weight, more preferably from0.2 to 8% by weight, still more preferably from 0.3 to 5% by weight, ofthe polishing liquid composition 3-3.

The amount of the oxidizing agent formulated is preferably from 0.1 to60% by weight, more preferably from 0.2 to 50% by weight, still morepreferably from 0.3 to 30% by weight, especially preferably from 0.3 to10% by weight, of the polishing liquid composition 3-3, from theviewpoint of obtaining a polishing speed at a practical level by rapidoxidation of the metal layer.

The amount of water formulated is preferably from 39.88 to 99.88% byweight, more preferably from 60 to 99.4% by weight, still morepreferably from 75 to 99% by weight, of the polishing liquid composition3-3. The pH of the polishing liquid composition 3-3 having the abovecomposition, which is the same as the polishing liquid composition 1-3,is preferably 10 or less, more preferably from 2 to 9.5, still morepreferably from 4 to 9, especially preferably from 5 to 9, from theviewpoints of keeping the polishing speed at a practical level,suppressing the dishing, and removing the fine scratch damages on thesurface.

The polishing liquid compositions 1 to 3 of the present invention can beprepared in any manner without particular limitations, and for instance,a polishing liquid composition can be obtained by appropriately mixingeach of the above components, and adjusting a pH. Concrete examplesthereof are as follows.

The polishing liquid composition 1 of the present invention can be, forinstance, prepared by the following procedures. First, an organic acidand/or an etching agent is added to a given amount of water, and a pH isadjusted to a given value. To the pH-adjusted aqueous solution of theorganic acid and/or etching agent is added a given amount of an aqueoussolution of a hydroxyl group-containing compound; or an aqueous solutionof an aliphatic carboxylic acid having 7 to 24 carbon atoms and/or saltsthereof, or an amine compound and/or salts thereof, the aqueous solutionof which pH is adjusted to a given level. A pH is finally adjusted,whereby a polishing liquid composition 1 can be obtained.

The polishing liquid composition 2 can be, for instance, prepared by thefollowing procedures. First, an organic acid and/or an etching agent isadded to a given amount of water, and a pH is adjusted to a given value.To the pH-adjusted aqueous solution of the organic acid and/or etchingagent is added a given amount of an aqueous solution of a hydroxylgroup-containing compound; or an aqueous solution of an aliphaticcarboxylic acid having 7 to 24 carbon atoms and/or salts thereof, or anamine compound and/or salts thereof, the aqueous solution of which pH isadjusted to a given level. An oxidizing agent is added before polishing,and a pH is finally adjusted, whereby a polishing liquid composition 2can be obtained.

The polishing liquid composition 3 can be, for instance, prepared by thefollowing procedures. First, an organic acid and/or an etching agent isadded to a given amount of water, and a pH is adjusted to a given value.To the pH-adjusted aqueous solution of the organic acid and/or etchingagent is added a given amount of an abrasive, and the mixture issufficiently stirred so as to uniformly disperse the abrasives. Further,to the dispersion is added a given amount of an aqueous solution of ahydroxyl group-containing compound; or an aqueous solution of analiphatic carboxylic acid having 7 to 24 carbon atoms and/or saltsthereof, or an amine compound and/or salts thereof, the aqueous solutionof which pH is adjusted to a given level. A given amount of an oxidizingagent is added before polishing as occasion demands, and a pH is finallyadjusted, whereby a polishing liquid composition 3 can be obtained.

In addition, various polishing aids other than those listed above suchas surfactants and dispersion stabilizers may be added to each of thepolishing liquid compositions 1 to 3.

The polishing liquid composition of the present invention can besuitably used for the metal CMP in which a surface comprising aninsulating layer and a metal layer is subject to polishing. The metalconstituting the metal layer includes copper or copper alloys, aluminumor aluminum alloys, tungsten, and the like. Among these metals,especially when used for a process for forming embedded metalinterconnection on a semiconductor substrate, copper or copper alloysare preferable. When the polishing liquid composition of the presentinvention is used in the formation of the metal interconnection layermade of copper or copper alloys, there are exhibited remarkable effectsof maintaining the polishing speed and suppressing the dishing of theembedded metal interconnection layer. In addition, the material forforming the insulating layer may be any of organic or inorganicmaterials, and includes inorganic materials such as silicon dioxide,fluorinated silicon dioxide, hydrogen-containing SOG (spin-on on glass),nitrides, such as tantalum nitride and titanium nitride; and organicmaterials such as organic SOG, polyimides, fluorinated polyimides,methyl polysiloxanes, aromatic polyethers, hydrogensilsesquioxane, andfluorocarbons.

The shape of these substrates to be polished is preferably those havinga shape of forming recesses of an interconnection shape on theinsulating film surface of the semiconductor substrate, and sedimentingmetals on the insulating film including the recesses. In addition, theremay be provided a barrier film made of tantalum, titanium, or a nitridethereof between the insulating film and the metal layer. Especially whenthe metal layer is made of copper or copper alloys, it is preferable toprovide the barrier film, whereby the diffusion of the copper to theinsulating layer can be prevented.

The polishing liquid compositions 1 and 2 of the present invention areeffective for a polishing processes using a fixed grinding wheel, apolishing pad in which abrasive grains are fixed to the pad, and thelike. The polishing liquid composition 3 is effective for a polishingprocess by loose abrasives using a usual polishing pad made of urethane,and it is also effective for a polishing processes using a fixedgrinding wheel, a polishing pad in which abrasive grains are fixed tothe pad, and the like.

The process for polishing a surface to be polished comprising aninsulating layer and a metal layer of the present invention comprisespolishing a semiconductor substrate using the polishing liquidcomposition of the present invention, thereby smoothening the polishedsurface.

In addition, the process for manufacturing a semiconductor substrate ofthe present invention comprises polishing a semiconductor surfacecomprising an insulating layer and a metal layer using the polishingliquid composition of the present invention, whereby the polishing speedof the metal layer can be maintained and the dishing of the embeddedmetal interconnection layer can be suppressed. Therefore, the processcan be suitably applied to a process for manufacturing the semiconductorsubstrate.

EXAMPLES I-1 to I-14 AND COMPARATIVE EXAMPLES I-1 TO I-4

Compounds having a structure in which each of two or more adjacentcarbon atoms has hydroxyl group in a molecule (hydroxyl group-containingcompound) used in Examples I-1 to I-14 are shown in Table 1. Thehydroxyl group-containing compound shown in Table 1, the organic acidshown in Table 2, and hydrogen peroxide were mixed so as to have theproportion shown in Table 2. Further, 5% by weight portion of anabrasive shown in Table 2 and balance water were mixed with stirring,and thereafter a pH of the liquid mixture was adjusted to 4.0, to give apolishing liquid composition. Incidentally, each of the used abrasiveswas fumed silica (primary particle size: 50 nm) and colloidal silica(primary particle size: 30 nm). In addition, each of the hydroxylgroup-containing compounds “a” to “e” of Table 1 dissolves in water at1.0% by weight or more. The substrate to be polished was polished underthe following conditions by single-sided polishing machine. Hereinbelow,the terms inside quotation marks are trade names.

Setting Conditions of Single-Sided Processing Machine

-   Single-sided processing machine used: single-sided polishing machine    (disc size: 30 cm), manufactured by Engis.-   Processing pressure: 29.4×10³ Pa-   Polishing Pad: upper layer: “IC1000” (manufactured by Rodel Nitta    K.K.); and lower layer: “SUBA400” (manufactured by Rodel Nitta    K.K.).-   Disc rotational speed: 60 rpm-   Work rotational speed: 50 rpm (rotating disc and work in the same    direction)-   Feeding flow rate for a polishing liquid composition: 100 ml/min-   Polishing time period: 10 minutes

In addition, the properties of the polishing liquid composition such asrelative polishing speed, relative etching speed, and dishing of thesurface to be polished were evaluated in accordance with the followingmethods. The results thereof are shown in Table 2.

Relative Polishing Speed

The relative polishing speed is a value obtained by dividing thepolishing speed of a polishing liquid composition by a polishing speedof a comparative example where the kinds and the amounts of an abrasive,an oxidizing agent and an etching agent were the same as the polishingliquid composition. The polishing speed was obtained by polishing arolled copper plate of a diameter of 50 mm and a plate thickness of 1mm, determining a change in the thickness before and after polishing,and dividing the resultant value by a polishing time. Incidentally, thethickness of the copper plate was measured by using a high-precisiondigital analyzer “MINIAX” commercially available from K. K. TokyoSeimitsu. Here, each of the relative polishing speeds for Examples I-1to I-5 and I-9 to I-10 was calculated based on Comparative Example I-1;each of the relative polishing speeds for Examples I-6 to I-8 wascalculated based on Comparative Example I-2; and each of the relativepolishing speeds for Examples I-13 to I-14 was calculated based onComparative Example I-3. Incidentally, apart from the above, therelative polishing speed for Examples I-11 was calculated based onComparative Example I-1; the relative polishing speed for Examples I-12was calculated based on Comparative Example I-2; and the relativepolishing speed for Comparative Example I-4 was calculated based onComparative Example I-1.

Relative Etching Speed

The relative etching speed is a value obtained by dividing an etchingspeed of the polishing liquid composition comprising the above hydroxylgroup-containing compound by an etching speed “b” of a polishing liquidcomposition not containing the above hydroxyl group-containing compoundbut having the same kinds and the amounts of an abrasive, an oxidizingagent and an etching agent as the polishing liquid composition. Here,each of the relative etching speeds for Examples I-1 to I-5 and I-9 toI-10 was calculated based on Comparative Example I-1; each of therelative etching speeds for Examples I-6 to I-8 was calculated based onComparative Example I-2; and each of the relative etching speeds forExamples I-13 to I-14 was calculated based on Comparative Example I-3.Incidentally, apart from the above, the relative etching speed forExamples I-11 was calculated based on Comparative Example I-1; therelative etching speed for Examples I-12 was calculated based onComparative Example I-2; and the relative etching speed for ComparativeExample I-4 was calculated based on Comparative Example I-1.Incidentally, each the etching speeds for each the polishing liquidcompositions of Examples 1-1 to I-14 and Comparative Example I-4 was avalue measured under the same conditions as the above etching test Bdescribed above, except for using these polishing liquid compositions.

Dishing

In order to evaluate dishing, a wafer chip of a square with a side of 20mm was cut out from a wafer (commercially available from SKW, “SKW6-2”,size: 200 mm) with copper damascene interconnection patterns. Five waferchips were fixed on an adhesive plate made of ceramic. Thereafter, acopper film in the periphery of the copper interconnection portion, theinterconnection of which had a width of 150 μm, was removed, withconfirming the state under the above conditions. The substrate waspolished to a point where a barrier film appeared, and was furtherpolished with 20% of a time period required for polishing until thispoint, to provide a sample for evaluating dishing. The dishing wasevaluated by determining a cross section profile of a copperinterconnection portion, the interconnection of which had a width of 150μm by a surface roughness tester (commercially available from (K.K)Mitsutoyo, “SV-600”). Incidentally, when there were no recesses havingsizes of 0.15 μm or more in the cross section profile of the copperinterconnection tested, it was evaluated as absence of dishing, and whenthere were recesses having sizes of 0.15 μm or more, it was evaluated aspresence of dishing, which are respectively denoted in Table 2 as“absence” or “presence.”

Here, the etching speed “b” of the polishing liquid compositions usedfor Comparative Examples I-1 to I-3 were as follows.

-   Comparative Example I-1: 80 Å/min-   Comparative Example I-2: 80 Å/min

Comparative Example I-3: 200 Å/min TABLE 1 No. Hydroxyl Group-ContainingCompound a n-C₄H₉CH(OH)CH₂OH b n-C₄H₉OCH₂CH(OH)CH₂OH cn-C₆H₁₃COOCH₂CH(OH)CH₂OH d (n-C₃H₇)₂NCH₂CH(OH)CH₂OH en-C₃H₇OCOCH(OH)CH(OH)COO-n-C₃H₇

TABLE 2 Hydroxyl Group- Hydrogen Containing Compound Organic AcidPeroxide Content Content Content Abrasive Kind (% by wt.) Kind (% bywt.) (% by wt.) Kind Ex. No. I-1 a 1.0 Gluconic 2.0 2.0 Fumed acidSilica I-2 b 1.0 Gluconic 2.0 2.0 Fumed acid Silica I-3 c 1.0 Gluconic2.0 2.0 Fumed acid Silica I-4 d 1.0 Gluconic 2.0 2.0 Fumed acid SilicaI-5 e 1.0 Gluconic 2.0 2.0 Fumed acid Silica I-6 a 1.0 Gluconic 2.0 2.0Colloidal acid Silica I-7 b 1.0 Gluconic 2.0 2.0 Colloidal acid SilicaI-8 c 1.0 Gluconic 2.0 2.0 Colloidal acid Silica I-9 a 0.5 Gluconic 2.02.0 Fumed acid Silica I-10 a 2.0 Gluconic 2.0 2.0 Fumed acid Silica I-11b 1.0 — — 2.0 Fumed Silica I-12 b 1.0 Gluconic 2.0 — Colloidal acidSilica I-13 a 1.0 Glycolic 2.0 2.0 Colloidal acid Silica I-14 b 1.0Glycolic 2.0 2.0 Colloidal acid Silica Comp. Ex. No. I-1 — — Gluconic2.0 2.0 Fumed acid Silica I-2 — — Gluconic 2.0 2.0 Colloidal acid SilicaI-3 — — Glycolic 2.0 2.0 Colloidal acid Silica I-4 Benzotriazole 1.0Gluconic 2.0 2.0 Fumed acid Silica Evaluation of Properties RelativePolishing Relative Etching Speed Speed Based on Based on Based on Basedon Based on Based on C. Ex. I-1 C. Ex. I-2 C. Ex. I-3 C. Ex. I-1 C. Ex.I-2 C. Ex. I-3 Dishing Ex. No. I-1 1.0 — — 0.1 or — — Absence less I-21.0 — — 0.1 or — — Absence less I-3 1.0 — — 0.15 — — Absence I-4 1.1 — —0.15 — — Absence I-5 1.1 — — 0.2 — — Absence I-6 — 1.0 — — 0.1 or —Absence less I-7 — 1.0 — — 0.1 or — Absence less I-8 — 1.1 — — 0.15 —Absence I-9 1.1 — — 0.1 or — — Absence less I-10 1.0 — — 0.1 or — —Absence less I-11 0.7 — — 0.1 or — — Absence less I-12 — 0.7 — — 0.1 or— Absence less I-13 — — 0.9 — — 0.1 Absence or less I-14 — — 0.9 — — 0.1Absence or less Comp. Ex. No. I-1 1.0 — — 1.0 — — Presence I-2 — 1.0 — —1.0 — Presence I-3 — — 1.0 — — 1.0 Presence I-4 0.1 — — 0.1 or — — *lessNote*The polishing speed was too slow to be evaluated.

It is found from the results of Tables 1 and 2 that all of the polishingliquid compositions of Examples I-1 to I-14 where the hydroxylgroup-containing compound is formulated in the polishing liquidcomposition suppressed the etching speed and the dishing is notgenerated without substantially lowering the polishing speed, ascompared to the polishing liquid compositions of Comparative ExamplesI-1 to I-3 where the hydroxyl group-containing compound is notformulated.

In addition, it is found that the polishing liquid composition ofComparative Example I-4 where benzotriazole acting to suppressingetching was used in place of the hydroxyl group-containing compound, thepolishing speed is extremely low.

Also, it is found that by using the hydroxyl group-containing compound,the etching agent, and the oxidizing agent, a higher polishing speed canbe realized, and the dishing can be prevented.

EXAMPLES II-1 TO II-12 AND COMPARATIVE EXAMPLES II-1 TO II-12

Each of the etching agents shown in Tables 3 and 4, and hydrogenperoxide were mixed with a given amount of water, so as to have theproportion shown in Tables 3 and 4. Further, 5% by weight portion of theabrasive shown in Tables 3 and 4 were mixed with stirring, andthereafter an aqueous ammonia was added so as to have a pH of the liquidmixture of 7.5 to 8. Separately from above, an aqueous ammonia waspreviously added to an aliphatic carboxylic acid having 7 to 24 carbonatoms to adjust the pH to 7.5 to 8, whereby preparing an aqueoussolution of the aliphatic carboxylic acid or its salt. The aqueoussolution of the aliphatic carboxylic acid or its salt was mixed with theabove liquid mixture with stirring, so as to have the proportion shownin Tables 3 and 4. Thereafter, a pH of the liquid mixture was adjustedto a value shown in Tables 3 and 4, to give each polishing liquidcomposition. Incidentally, each of the used abrasives was fumed silica(primary particle size: 50 nm) and colloidal silica (primary particlesize: 100 nm). In addition, a rolled copper plate of a diameter of 50 mmand a plate thickness of 1 mm was polished under the same conditions asabove by single-sided polishing machine.

In addition, the properties of the polishing liquid composition such asrelative polishing speed, relative etching speed, dishing of the surfaceto be polished, and surface condition of copper were evaluated inaccordance with the following methods. The results thereof are shown inTables 3 and 4.

Relative Polishing Speed

The relative polishing speed is a value obtained by dividing thepolishing speed of a polishing liquid composition by a polishing speedof a comparative example where the kinds and the amounts of an abrasive,an oxidizing agent and an etching agent were the same as the polishingliquid composition. The polishing speed was obtained by polishing arolled copper plate of a diameter of 50 mm and a plate thickness of 1 mmunder the polishing conditions mentioned above, determining a change inthe thickness before and after polishing, and dividing the resultantvalue by a polishing time. Incidentally, the thickness of the copperplate was measured by using a high-precision digital analyzer “MINIAX”commercially available from K. K. Tokyo Seimitsu. Here, each of therelative polishing speeds for Examples II-1 to II-6 was calculated basedon Comparative Example II-1; the relative polishing speed for ExampleII-7 was calculated based on Comparative Example II-2; the relativepolishing speed for Example II-8 was calculated based on ComparativeExample II-3; the relative polishing speed for Example II-9 wascalculated based on Comparative Example II-4; the relative polishingspeed for Example II-10 was calculated based on Comparative ExampleII-5; the relative polishing speed for Example II-11 was calculatedbased on Comparative Example II-11; the relative polishing speed forExample II-12 was calculated based on Comparative Example II-12; therelative polishing speed for Comparative Example II-9 was calculatedbased on Comparative Example II-1; and the relative polishing speed forComparative Example II-10 was calculated based on Comparative ExampleII-2. Incidentally, apart from the above, each of the relative polishingspeeds for Comparative Examples II-6 to II-8 was calculated based onComparative Example II-1.

Relative Etching Speed

The relative etching speed is a value obtained by dividing an etchingspeed of the polishing liquid composition comprising the above aliphaticcarboxylic acid and/or its salt by an etching speed “c” of a polishingliquid composition not containing the above aliphatic carboxylic acidand/or its salt but having the same kinds and the amounts of anabrasive, an oxidizing agent and an etching agent as the polishingliquid composition. Here, each of the relative etching speeds forExamples II-1 to II-6 was calculated based on Comparative Example II-1;the relative etching speed for Example II-7 was calculated based onComparative Example II-2; the relative etching speed for Example II-8was calculated based on Comparative Example II-3; the relative etchingspeed for Example II-9 was calculated based on Comparative Example II-4;the relative etching speed for Example II-10 was calculated based onComparative Example II-5; the relative etching speed for Example II-11was calculated based on Comparative Example II-11; the relative etchingspeed for Example II-12 was calculated based on Comparative ExampleII-12; the relative etching speed for Comparative Example II-9 wascalculated based on Comparative Example II-1; and the relative etchingspeed for Comparative Example II-10 was calculated based on ComparativeExample II-2. Incidentally, apart from the above, each of the relativeetching speeds for Comparative Examples II-6 to II-8 was calculatedbased on Comparative Example II-1. Incidentally, each the etching speedsfor each the polishing liquid compositions of Examples II-1 to II-12 andComparative Examples II-7 to II-8 was a value measured under the sameconditions as the above etching test C described above, except for usingthese polishing liquid compositions.

Dishing

Dishing was evaluated in the same manner as above. Incidentally, whenthere were no recesses having sizes of 0.15 μm or more in the crosssection profile of the copper interconnection tested, it was evaluatedas absence of dishing, and when there were recesses having sizes of 0.15μm or more, it was evaluated as presence of dishing, which arerespectively denoted in Tables 3 and 4 as “absence” or “presence.”

Copper Surface Condition

The surface condition of the copper film at the copper interconnectionportion, the interconnection of which has a width of 150 μm on thesurface of wafer chip used in the evaluation of the dishing was observedby optical microscope, to confirm the presence or absence of roughening.

Here, the etching speed “c” of the polishing liquid compositions usedfor Comparative Examples II-1 to II-6 were as follows.

-   Comparative Example II-1: 50 Å/min-   Comparative Example II-2: 100 Å/min-   Comparative Example II-3: 200 Å/min-   Comparative Example II-4: 600 Å/min-   Comparative Example II-5: 50 Å/min

Comparative Example II-6: 100 Å/min TABLE 3 Aliphatic Carboxylic AcidHydrogen and/or Its Salt Etching Agent Peroxide Abrasive Ex. No. KindContent Kind Content Content Kind pH II-1 Octanoic acid 0.6¹⁾ Glycolicacid 2.0¹⁾ 4.0¹⁾ Colloidal 7.6 Silica II-2 Nonanoic 0.3 Glycolic acid2.0 4.0 Colloidal 7.7 acid Silica II-3 Heptanoic 1.2 Glycolic acid 2.04.0 Colloidal 7.6 acid Silica II-4 Decanoic 0.3 Glycolic acid 2.0 4.0Colloidal 7.7 acid Silica II-5 Oleic acid 0.3 Glycolic acid 2.0 4.0Colloidal 8.0 Silica II-6 Isooctanoic 1.5 Glycolic acid 2.0 4.0Colloidal 7.7 acid²⁾ Silica II-7 Octanoic 1.2 Citric acid 2.0 2.0 Fumed7.6 acid Silica II-8 Octanoic 1.0 Phthalic 2.0 2.0 Fumed 7.9 acid acidSilica II-9 Octanoic 1.5 Aminotri- 2.0 2.0 Fumed 7.6 acid (methylene-Silica phosphonic acid) II-10 Octanoic 0.4 Glycolic acid 2.0 — Colloidal7.6 acid Silica II-11 Octanoic 1.0 Hydrochloric 2.0 2.0 Colloidal 7.7acid acid Silica II-12 Octanoic 0.5 Sulfuric acid 2.0 2.0 Colloidal 7.9acid Silica Evaluation for Properties Relative Relative Comp. Ex. ToCopper Polishing Etching Which Evaluation Surface Ex. No. Speed SpeedWas Based Dishing Condition II-1 1.0 0.1 or less Comp. Ex. II-1 AbsenceNo Roughening II-2 1.0 0.1 or less Comp. Ex. II-1 Absence No RougheningII-3 1.0 0.1 or less Comp. Ex. II-1 Absence No Roughening II-4 0.9 0.1or less Comp. Ex. II-1 Absence No Roughening II-5 0.9 0.1 or less Comp.Ex. II-1 Absence No Roughening II-6 1.0 0.1 or less Comp. Ex. II-1Absence No Roughening II-7 1.0 0.1 or less Comp. Ex. II-2 Absence NoRoughening II-8 0.9 0.1 or less Comp. Ex. II-3 Absence No RougheningII-9 0.9 0.1 or less Comp. Ex. II-4 Absence No Roughening II-10 0.9 0.1or less Comp. Ex. II-5 Absence No Roughening II-11 0.9 0.1 or less Comp.Ex. II-11 Absence No Roughening II-12 0.9 0.1 or less Comp. Ex. II-12Absence No RougheningNote¹⁾% by weight²⁾Secanoic C8 acid (trade name, commercially available from ExonChemicals K.K.)

TABLE 4 Aliphatic Carboxylic Acid Hydrogen Comp. and/or Its Salt EtchingAgent Peroxide Abrasive Ex. No. Kind Content Kind Content Content KindpH II-1 — — Glycolic acid 2.0¹⁾ 4.0¹⁾ Colloidal 7.6 Silica II-2 — —Citric acid 2.0 2.0 Fumed 7.6 Silica II-3 — — Phthalic 2.0 2.0 Fumed 7.9acid Silica II-4 — — Aminotri- 2.0 2.0 Fumed 7.6 (methylene- Silicaphosphonic acid) II-5 — — Glycolic acid 2.0 — Colloidal 7.6 Silica II-6— — Glycolic acid 1.0 4.0 Colloidal 7.6 Citric acid 1.0 Silica II-7Octanoic 0.5¹⁾ — — 4.0 Colloidal 7.8 acid Silica Heptanoic 0.5 acid II-8Oleic acid 0.5 — — 4.0 Colloidal 7.6 Silica II-9 Benzotriazole 0.3Glycolic acid 2.0 4.0 Colloidal 7.6 Silica II-10 Ammonium 1.0 Citricacid 2.0 2.0 Fumed 7.6 Polyacrylate Silica II-11 — — Hydrochloric 2.02.0 Colloidal 7.7 acid Silica II-12 — — Sulfuric 2.0 2.0 Colloidal 7.9acid Silica Evaluation for Properties Relative Relative Comp. Ex. ToCopper Comp. Polishing Etching Which Evaluation Surface Ex. No. SpeedSpeed Was Based Dishing Condition II-1 1.0 1.0 — Presence No RougheningII-2 1.0 1.0 — Presence No Roughening II-3 1.0 1.0 — Presence NoRoughening II-4 1.0 1.0 — Presence No Roughening II-5 1.0 1.0 — PresenceNo. Roughening II-6 1.3 1.5 Comp. Ex. II-1 Presence No Roughening II-70.1 or less 0.1 or less Comp. Ex. II-1 The polishing speed was too slowto be evaluated. II-8 0.1 or less 0.1 or less Comp. Ex. II-1 II-9 0.1 orless 0.1 or less Comp. Ex. II-1 II-10 1.2 0.1 or less Comp. Ex. II-2Absence Presence of Roughening II-11 1.0 1.0 — Presence No RougheningII-12 1.0 1.0 — Presence No RougheningNote¹⁾% by weight

It is found from the results of Tables 3 and 4 that all of the polishingliquid compositions of Examples II-1 to II-12 where the aliphaticcarboxylic acid having 7 to 24 carbon atoms is formulated in thepolishing liquid composition suppressed the etching speed and thedishing is not generated without substantially lowering the polishingspeed, as compared to the polishing liquid compositions of ComparativeExamples II-1 to II-5, II-11 and II-12 where the aliphatic carboxylicacid is not formulated.

In addition, the polishing liquid composition of Comparative ExampleII-6 where two kinds of aliphatic carboxylic acids having 6 or lesscarbon atoms are used in combination without using the aliphaticcarboxylic acid having 7 to 24 carbon atoms has high etching speed andthe dishing generated.

In addition, it is found that all of the polishing liquid composition ofComparative Example II-7 where two kinds of the aliphatic carboxylicacids having 7 to 24 carbon atoms are used in combination; the polishingliquid composition of Comparative Example II-8 where the organic acidcapable of forming an aqueous salt with copper is not formulated; andthe polishing liquid composition of Comparative Example II-9 wherebenzotriazole for suppressing etching is formulated have extremely lowpolishing speeds, and that the polishing liquid composition ofComparative Example II-10 where ammonium polyacrylate is formulated hascopper surface with roughening generated.

Therefore, an even higher polishing speed can be realized by using thealiphatic carboxylic acid having 7 to 24 carbon atoms in combinationwith an etching agent, and the dishing can be prevented.

Especially, from the viewpoint of keeping the low-foamability duringpolishing, it is more preferable that the aliphatic carboxylic addhaving 7 to 24 carbon atoms is heptanoic acid, octanoic acid andnonanoic acid.

EXAMPLES III-1 TO III-8 AND COMPARATIVE EXAMPLES III-1 TO III-5

Each of the etching agents shown in Table 5, and the amine compound weremixed with a given amount of water, so as to have the proportion shownin Table 5, and thereafter an aqueous ammonia was added so as to have apH of the liquid mixture of 6 to 8. Further, hydrogen peroxide was addedso as to have a proportion shown in Table 5. Further, 5% by weightportion of an abrasive shown in Table 5 was mixed with stirring, andthereafter a pH of the liquid mixture was adjusted to the value shown inTable 5, to give a polishing liquid composition. Incidentally, each ofthe used abrasives was fumed silica (primary particle size: 50 nm) andcolloidal silica (primary particle size: 100 nm). In addition, a rolledcopper plate of a diameter of 50 mm and a plate thickness of 1 mm waspolished under the same conditions as above by single-sided polishingmachine.

In addition, the properties of the polishing liquid composition such asrelative polishing speed, relative etching speed, and dishing of thesurface to be polished were evaluated in accordance with the followingmethods. The results thereof are shown in Table 5.

Relative Polishing Speed

The relative polishing speed is a value obtained by dividing thepolishing speed of a polishing liquid composition by a polishing speedof a comparative example where the kinds and the amounts of an abrasive,an oxidizing agent and an etching agent were the same as the polishingliquid composition. The polishing speed was obtained by polishing arolled copper plate of a diameter of 50 mm and a plate thickness of 1mm, determining a change in the thickness before and after polishing,and dividing the resultant value by a polishing time. Incidentally, thethickness of the copper plate was measured by using a high-precisiondigital analyzer “MINIAX” commercially available from K. K. TokyoSeimitsu. Here, each of the relative polishing speeds for ExamplesIII-1, III-2, III-4, III-5, and III-7 was calculated based onComparative Example III-1; the relative polishing speed for ExampleIII-6 was calculated based on Comparative Example III-2; the relativepolishing speed for Example III-3 was calculated based on ComparativeExample III-3; and the relative polishing speed for Example III-8 wascalculated based on Comparative Example III-4. Incidentally, apart fromthe above, the relative polishing speed for Comparative Example III-5was calculated based on Comparative Example III-1.

Relative Etching Speed

The relative etching speed is a value obtained by dividing an etchingspeed of the polishing liquid composition comprising the above aminecompound and/or its salt by an etching speed “c” of a polishing liquidcomposition not containing the above amine compound and/or its salt buthaving the same kinds and the amounts of an abrasive, an oxidizing agentand an etching agent as the polishing liquid composition. Here, each ofthe relative etching speeds for Examples III-1, III-2, III-4, III-5, andIII-7 was calculated based on Comparative Example III-1; the relativeetching speed for Example III-6 was calculated based on ComparativeExample III-2; the relative etching speed for Example III-3 wascalculated based on Comparative Example III-3; and the relative etchingspeed for Example III-8 was calculated based on Comparative ExampleIII-4. Incidentally, apart from the above, the relative etching speedfor Comparative Example III-5 was calculated based on ComparativeExample III-1. Incidentally, each the etching speeds for each thepolishing liquid compositions of Examples III-1 to III-8 and ComparativeExample III-5 was a value measured under the same conditions as theabove etching test C described above, except for using these polishingliquid compositions.

Dishing

Dishing was evaluated in the same manner as above. Incidentally, whenthere were no recesses having sizes of 0.15 μm or more in the crosssection profile of the copper interconnection tested, it was evaluatedas absence of dishing, and when there were recesses having sizes of 0.15μm or more, it was evaluated as presence of dishing, which arerespectively denoted in Table 5 as “absence” or “presence.”

Here, the etching speed “c” of the polishing liquid compositions usedfor Comparative Examples III-1 to III-4 were as follows.

-   Comparative Example III-1: 50 Å/min-   Comparative Example III-2: 100 ⊂/min-   Comparative Example III-3: 50 Å/min

Comparative Example III-4: 50 Å/min TABLE 5 Hydrogen Amine CompoundEtching Agent Peroxide Content Content Content Abrasive Kind (% by wt.)Kind (% by wt.) (% by wt.) Kind pH Ex. No. III-1 Octylamine 0.8 Glycolic2.0 4.0 Colloidal 7.6 acid Silica III-2 Nonylamine 0.5 Glycolic 2.0 4.0Colloidal 7.6 acid Silica III-3 Decylamine 1.0 Hydrochloric 2.0 2.0Colloidal 7.7 acid Silica III-4 Oleylamine 0.4 Glycolic 2.0 4.0Colloidal 7.6 acid Silica III-5 Dimethyl- 0.5 Glycolic 2.0 4.0 Colloidal7.6 dodecylamine acid Silica III-6 Dimethyl- 0.8 Citric 2.0 2.0 Fumed7.6 dodecylamine acid Silica III-7 Dodecyl- 0.8 Glycolic 2.0 4.0Colloidal 7.6 diethanolamine acid Silica III-8 Octylamine 0.5 Glycolic2.0 — Colloidal 7.6 acid Silica Comp. Ex. No. III-1 — — Glycolic 2.0 4.0Colloidal 7.6 acid Silica III-2 — — Citric 2.0 2.0 Fumed 7.6 acid SilicaIII-3 — — Hydrochloric 2.0 2.0 Colloidal 7.7 acid Silica III-4 — —Glycolic 2.0 — Colloidal 7.6 acid Silica III-5 Benzotriazole 0.3Glycolic 2.0 4.0 Colloidal 7.6 acid Silica Evaluation for PropertiesRelative Relative Comp. Ex. To Polishing Etching Which Evaluation SpeedSpeed Was Based Dishing Ex. No. III-1 1.0 0.1 or less Comp. Ex. III-1Absence III-2 0.9 0.1 or less Comp. Ex. III-1 Absence III-3 1.0 0.1 orless Comp. Ex. III-3 Absence III-4 0.9 0.1 or less Comp. Ex. III-1Absence III-5 0.9 0.1 or less Comp. Ex. III-1 Absence III-6 0.9 0.1 orless Comp. Ex. III-2 Absence III-7 0.9 0.1 or less Comp. Ex. III-1Absence III-8 0.9 0.1 or less Comp. Ex. III-4 Absence Comp. Ex. No.III-1 1.0 1.0 — Presence III-2 1.0 1.0 — Presence III-3 1.0 1.0 —Presence III-4 1.0 1.0 — Presence III-5 0 1 or less 0.1 or less Comp.Ex. III-1 *Note*The polishing speed was too slow to be evaluated.

It is found from the results of Table 5 that all of the polishing liquidcompositions of Examples III-1 to III-8 where the amine compound isformulated in the polishing liquid composition suppressed the etchingspeed and the dishing is not generated without substantially loweringthe polishing speed, as compared to the polishing liquid compositions ofComparative Examples III-1 to III-4 where the amine compound is notformulated.

In addition, it is found that the polishing liquid composition ofComparative Example III-5 where benzotriazole acting to suppressingetching was used in place of the amine compound, the polishing speed isextremely low.

Therefore, it is found that an even higher polishing speed can berealized by using the amine compound in combination with an etchingagent, and the dishing can be prevented.

Especially, from the viewpoint of keeping the low-foamability duringpolishing, it is more preferable that the amine compound is heptylamine,octylamine and nonylamine.

Since the polishing liquid composition of the present invention is usedfor polishing a surface to be polished comprising an insulating layerand a metal layer, there are exhibited such effects that the polishingspeed of the metal film is maintained, that the etching speed issuppressed, and defects such as dishing in the interconnection metallayer is not generated.

1. A polishing liquid composition for polishing a surface to be polishedcomprising an insulating layer and a metal layer, the polishing liquidcomposition comprising a compound having six or more carbon atoms and astructure in which each of two or more adjacent carbon atoms has ahydroxyl group in a molecule, and water, wherein the compound having astructure in which each of two or more adjacent carbon atoms has ahydroxyl group in a molecule is represented by the formula (I):R¹—X—(CH₂)_(q)—[CH(OH)]_(n)—CH₂OH   (I) wherein R¹ is a hydrocarbongroup having 1 to 12 carbon atoms; X is a group represented by(CH₂)_(m), wherein m is 1, oxygen atom, sulfur atom, COO group, OCOgroup, a group represented by NR² or O(R²O)P(O)O, wherein R² is hydrogenatom or a hydrocarbon group having 1 to 24 carbon atoms; q is 0 or 1;and n is an integer of 1 to
 4. 2. The polishing liquid compositionaccording to claim 1, further comprising an organic acid.
 3. Thepolishing liquid composition according to claim 2, wherein the organicacid is an etching agent.
 4. The polishing liquid composition accordingto claim 1, further comprising an etching agent comprising an inorganicacid. 5-6. (canceled)
 7. The polishing liquid composition according toclaim 1, further comprising an oxidizing agent, an abrasive or a mixturethereof. 8-10. (canceled)
 11. A method of using a polishing liquidcomposition, the method comprising polishing a surface using thepolishing liquid composition of claim
 1. 12. The polishing liquidcomposition according to claim 2, further comprising an oxidizing agent,an abrasive or a mixture thereof.
 13. A method of using a polishingliquid composition, the method comprising polishing a surface using thepolishing liquid composition of claim
 2. 14. A method of using apolishing liquid composition, the method comprising polishing a surfaceusing the polishing liquid composition of claim
 7. 15. A method of usinga polishing liquid composition, the method comprising polishing asurface using the polishing liquid composition of claim
 12. 16. A methodof making a polishing liquid composition, the method comprising mixingwater and a compound having a molecular structure in which each of twoor more adjacent carbon atoms has a hydroxyl group; and producing thepolishing liquid composition of claim
 1. 17. The polishing compoundaccording to claim 1, wherein the compound having a structure in whicheach of two or more adjacent carbon atoms has a hydroxyl group in amolecule is selected from the group consisting of 1,2-heptanediol,1,2-hexanediol, 1,2-octanediol, 1,2,3-hexanetriol, 1,2,6-hexanetriol,1,2,3-heptanetriol, glyceryl ethers, monoglycerides, partiallyesterified products prepared by carrying out an esterification reactionof gluconic acid with an alcohol, compounds prepared by reactingglycidol with a monoalkylamine or a dialkylamine, diesters of tartaricacid, and 1,2-cyclohexanediol.